AP9T15GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ www.DataSheet4U.com Capable of ...
AP9T15GH/J
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Low Gate Charge ▼ www.DataSheet4U.com Capable of 2.5V gate drive G S ▼ Single Drive Requirement ▼ RoHS Compliant D
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
20V 50mΩ 12.5A
Description
The Advanced Power
MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G D S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current
1
Rating 20 ±16 12.5 8 60 12.5 0.1 -55 to 150 -55 to 150
Units V V A A A W W/ ℃ ℃ ℃
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 10 110 Units ℃/W ℃/W
Data and specifications subject to change without notice
200908052-1/4
AP9T15GH/J
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) www.DataSheet4U.com VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown
Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 Typ. 0.02 10 5 1 2 8 55 10 3 360 70 50 1.67 Max. Units 50 80 1.5 1 25 ±100...
