Device under development
A-GA10JT12
Normally – OFF Silicon Carbide Super Junction Transistor
VDS I
D
RDS(ON)
= 1200 V
= 7A = 220 mȍ
Features
225 oC maximum operating temperature Best in class temperature independent switching
and blocking performance Lowest VDS(ON) as compared to any other SiC switch Suitable for connecting an anti-parallel diod...
