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A1002 Transistor Datasheet PDFPower Transistor Power Transistor |
| Part Number | A1002 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1002 DESCRIPTION ·High Current Capability ·CollectorEmitter Breakdown Voltage : V(BR)CEO= 120V(Min.) APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO CollectorBase Voltage 120 V VCEO CollectorEmitter Voltage 120 V VEBO EmitterBase Voltage 6 V IC Collector CurrentContinuous Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature 12 A . |
| Manufacture | INCHANGE |
| Datasheet |
| Part Number | A1002 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1002 DESCRIPTION ·High Current Capability ·CollectorEmitter Breakdown Voltage : V(BR)CEO= 120V(Min.) APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO CollectorBase Voltage 120 V VCEO CollectorEmitter Voltage 120 V VEBO EmitterBase Voltage 6 V IC Collector CurrentContinuous Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature 12 A . |
| Manufacture | INCHANGE |
| Datasheet |
| Part Number | A1002 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1002 DESCRIPTION ·High Current Capability ·CollectorEmitter Breakdown Voltage : V(BR)CEO= 120V(Min.) APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO CollectorBase Voltage 120 V VCEO CollectorEmitter Voltage 120 V VEBO EmitterBase Voltage 6 V IC Collector CurrentContinuous Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature 12 A . |
| Manufacture | INCHANGE |
| Datasheet |
| Part Number | A1002 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Feature | INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1002 DESCRIPTION ·High Current Capability ·CollectorEmitter Breakdown Voltage : V(BR)CEO= 120V(Min.) APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO CollectorBase Voltage 120 V VCEO CollectorEmitter Voltage 120 V VEBO EmitterBase Voltage 6 V IC Collector CurrentContinuous Collector Power Dissipation PC @TC=25℃ Tj Junction Temperature Tstg Storage Temperature 12 A . |
| Manufacture | INCHANGE |
| Datasheet |
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