A1018

Transistor 2SA1018 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC1473 s Features q High collector to emitter voltage VCEO. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –250 –200 –5 –100 –70 750 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 13.5±0.5 5.1±0.2 5.0±0.2 Unit: mm 4.0±0.2 +0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 2.3±0.2 123 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio ICEO VCEO VEBO hFE* VCE = –120V, IB = 0, Ta = 60˚C IC = –100µA, IB = 0 IE = –1µA, IC = 0 VCE = –10V, IC = –5mA –200 –5 60 –1 µA V V 220 Collector to emitter saturation voltage VCE(sat) IC = –50mA, IB = –5mA –1.5 V Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz 50 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f= 1MHz 10 pF *hFE Rank classification Rank Q hFE 60 ~ 150 R 100 ~ 220 1 Collector power dissipation PC (mW) Transistor PC — Ta 1000 900 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Collector to emitter saturation vol...