2SA1024
PNP Silicon Epitaxial Planar Transistor
for high voltage applications. The transistor is subdivided into two g...
2SA1024
PNP Silicon Epitaxial Planar Transistor
for high
voltage applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 C)
O
Parameter Collector Base
Voltage Collector Emitter
Voltage Emitter Base
Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol -VCBO -VCEO -VEBO -IC IE Ptot Tj Tstg
Value 150 150 5 50 50 625 150 - 55 to + 150
Unit V V V mA mA mW
O
C C
O
Characteristics at Ta = 25 C
O
Parameter DC Current Gain at -VCE = 5 V, -IC = 10 mA Collector Base Cutoff Current at -VCB = 150 V Emitter Base Cutoff Current at -VEB = 5 V Collector Emitter Saturation
Voltage at -IC = 10 mA, -IB = 1 mA Base Emitter
Voltage at -VCE = 5 V, -IC = 30 mA Gain Bandwidth Product at -VCE = 30 V, -IC = 10 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Current Gain Group O Y
Symbol hFE hFE -ICBO -IEBO -VCE(sat) -VBE fT COB
Min. 70 120 -
Typ. 120 -
Max. 140 240 0.1 0.1 0.8 0.9 5
Unit µA µA V V MHz pF
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7/15/2011
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