A1034

www.DataSheet4U.com Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2405 and 2SC2406 Unit: mm s Features q q q 2.9 –0.05 Parameter Collector to base voltage Collector to 2SA1034 2SA1035 2SA1034 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –35 –55 –35 –55 –5 –100 –50 200 150 –55 ~ +150 Unit 1.1 –0.1 +0.2 2 emitter voltage 2SA1035 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : F(2SA1034) H(2SA1035) s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage *h FE1 (Ta=25˚C) Symbol ICBO ICEO Conditions VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –2mA IC = –100mA, IB = –10mA*2 VCE = –1V, IC = –100mA*2 VCB = –5V, IE = 2mA, f = 200MHz VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT *2 min typ 0 to 0.1 0.1 to 0.3 0.4±0.2 0.8 V max –100 –1 0.16 –0.06 +0.1 0.4 –0.05 +0.1 s Absolute Maximum Ratings 1.9±0.2 Low noise voltage NV. High foward current transfer ratio hFE. Mini type package, allowing dow...