SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SA1069 2SA1069A
DESC...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SA1069 2SA1069A
DESCRIPTION ·With TO-220 package ·Complement to type 2SC2516/2516A ·Low collector saturation
voltage APPLICATIONS ·Switching regulators ·DC-DC converters ·High-frequency power amplifier
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO PARAMETER Collector-base
voltage 2SA1069 VCEO Collector-emitter
voltage 2SA1069A VEBO IC ICM IB Emitter-base
voltage Collector current Collector current-Peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 Open collector Open base -80 -12 -5 -10 -2.5 1.5 W V A A A CONDITIONS Open emitter VALUE -80 -60 V UNIT V
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SA1069 IC=-3.0A ,IB=-0.3A;L=1mH 2SA1069A IC=-3A; IB=-0.3A IC=-3A; IB=-0.3A VCB=-60V; IE=0 CONDITIONS
2SA1069 2SA1069A
SYMBOL
MIN -60
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining
voltage
V -80 -0.6 -1.5 V V
VCEsat VBEsat
Collector-emitter saturation
voltage Base-emitter saturation
voltage 2SA1069 2SA1069A
ICBO
Collector cut-off current
-10 VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-0.3A ; VCE=-5V IC=-3A ; VCE=-5V 40 40 200 -10
µA
IEBO hFE-1 hFE-2
Emitter cut-off curr...