A1123

Transistor 2SA1123 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 s Features q Satisfactory foward current transfer ratio hFE collector current IC characteristics. q High collector to emitter voltage VCEO. q Small collector output capacitance Cob. q Makes up a complementary pair with 2SC2631, which is opti- mum for the pre-driver stage of a 20 to 40W output amplifier. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –150 –150 –5 –100 –50 750 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 13.5±0.5 5.1±0.2 5.0±0.2 Unit: mm 4.0±0.2 +0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 2.3±0.2 123 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage ICBO VCEO VEBO hFE* VCE(sat) VCB = –100V, IE = 0 IC = –0.1mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA –150 –5 130 –1 µA V V 450 –1 V Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz 200 MHz Collector output capacitance Noise voltage Cob NV VCB = –10V...