A1163 Datasheet (data sheet) PDF

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A1163 Datasheet - 2SA1163

A1163   A1163  

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2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 A udio Frequency General Purpose Amplifie r Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 200 to 700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC2713 • Small package Unit: mm Absolute Maximum

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Toshiba Semiconductor



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