Ordering number:ENN779D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1209/2SC2911
160V/140mA High-Voltage Switching ...
Ordering number:ENN779D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1209/2SC2911
160V/140mA High-
Voltage Switching and AF 100W Predriver Applications
Features
· Adoption of FBET process. · High breakdown
voltage. · Good linearity of hFE and small Cob. · Fast switching speed.
Package Dimensions
unit:mm
2009B
[2SA1209/2SC2911]
8.0 4.0
2.7
1.5 3.0 7.0
11.0
1.6 0.8
0.8
0.6
3.0
0.5
15.5
( ) : 2SA1209
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
12 3 2.4
4.8
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)80V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)5V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)10mA
Output Capacitance
Cob VCB=(–)10V, f=1MHz
*: The 2SA1209/2SC2911 are classified by 10mA hFE as follows :
Rank
R
S
T
hFE 100 to 200 140 to 280 200 to 400
1.2
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126
Ratings (–)180 (–)160 (–)5 (–)140 (–)200 1 10 150
–55 to +150
Unit V V V mA mA W W ˚C ˚C
min 100*
Ratings typ
max
Unit
(–)0.1 µA
(–)0.1 µA
400*
150 MHz
(4.0)3.0
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have spe...
