A1303

LAPT sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1303 –150 –150 –5 –14 –3 125(Tc=25°C) 150 –55 to +150 2SA1303 Application : Audio and General Purpose (Ta=25°C) 2SA1303 –100max –100max –150min 50min –2.0max 50typ 400typ V pF 20.0min 4.0max Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284) (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–0.5A VCE=–12V, IE=2A VCB=–10V, f=1MHz External Dimensions MT-100(TO3P) 5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1 Unit µA µA V 19.9±0.3 4.0 a b ø3.2±0.1 MHz 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 5.45±0.1 B C E sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL (Ω) 12 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (µs) 0.25typ tstg (µs) 0.85typ tf (µs) 0.2typ 5.45±0.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) A A m m mA 00 00 00 –3 –5 –4 V CE ( sa t ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) (V C E =–4V) –14 00 –6 mA 00 m A –12 Collector Current I C (A) –200 –7 mA –1 50 m A Collector Current I C (A) –10 –2 Tem p) –8 –10 0mA se Tem 125 C (C –4 I B =–20mA –5A 0 0 –1 –2 –3 –4 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 0 0 2...