A1319

Ordering number:EN1334C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1319/2SC3332 High-Voltage Switching Applications Features · Hgih breakdown voltage. · Excellent hFE linearity. · Wide ASO and highly resistant to breakdown. · Adoption of MBIT process. Switching Test Circuit Package Dimensions unit:mm 2003A [2SA1319/2SC3332] ( ) : 2SA1319 (For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F) Specifications JEDEC : TO-92 EIAJ : SC-43 SANYO : NP B : Base C : Collector E : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Ratings (–)180 (–)160 (–)6 (–)0.7 (–)1.5 700 150 –55 to +150 Unit V V V A A mW ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Common Base Output Capacitance Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VCB=(–)120V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)100mA VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA VCB=(–)10V IC=(–)250mA, IB=(–)25mA Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time VBE(sat) V(BR)CBO V(BR)CEO V(B...