2SA1320
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1320
High Voltage Switching Applications C...
2SA1320
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1320
High
Voltage Switching Applications Color TV Chroma Output Applications
High
voltage: VCEO = −250 V Low Cre: 1.8 pF (max) Complementary to 2SC3333 Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulsed Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −250 −250 −5 −50 −100 −20 0.6 150 −55~150 Unit V V V mA mA W °C °C
JEDEC JEITA TOSHIBA
TO-92 SC-43 2-5F1B
Weight: 0.21 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown
voltage DC current gain Collector-emitter saturation
voltage Base-emitter
voltage Transition frequenc...