SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SA1718 www.DataSheet4...
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SA1718 www.DataSheet4U.com
DESCRIPTION ·With TO-220F package ·High DC current gain. ·Low collector saturation
voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application PINNING
PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current-peak Base current TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -5 -10 -0.5 20 W UNIT V V V A A A
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SA1718 www.DataSheet4U.com
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
Collector-emitter breakdown
voltage
IC=-30mA; IB=0 IC=-2A ; IB=-2mA IC=-2A ; IB=-2mA VCB=-100V;IE=0 VEB=-7V;IC=0 IC=-2A ; VCE=-2V IC=-4A ; VCE=-2V
-100
V
Collector-emitter saturation
voltage
-1.5
V
Base-emitter saturation
voltage
-2.0
V
Collector cut-off current
-10
µA
Emitter cut-off current
-5.0
mA
DC current gain
2000
20000
DC current gain
500
hFE classifications M 2000-5000 L 4000-10000 K 8000...