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A1767 Datasheet

Part Number A1767
Manufacturers Panasonic
Logo Panasonic
Description 2SA1767
Datasheet A1767 DatasheetA1767 Datasheet (PDF)

Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A ■ Features • High collector-emitter voltage (Base open) VCEO 0.7±0.1 0.7±0.2 Unit: mm 5.0±0.2 5.1±0.2 4.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C www.DataSheet4U.com Parameter Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −300 −300 −5 −70 −100 750 150 −55 to +150 Unit V V V 2.3±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collec.

  A1767   A1767






Part Number A1769
Manufacturers Sanyo
Logo Sanyo
Description 2SA1769
Datasheet A1767 DatasheetA1769 Datasheet (PDF)

Ordering number:EN3707 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1769/2SC4613 160V/700mA Switching Applications Applications · Color TV audio output, conveter, inverter. Features · Adoption of MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. Package Dimensions unit:mm 2042A [2SA1769/2SC4613] ( ) : 2SA1769 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Vo.

  A1767   A1767







Part Number A1768
Manufacturers Sanyo
Logo Sanyo
Description 2SA1768
Datasheet A1767 DatasheetA1768 Datasheet (PDF)

Ordering number:EN3582 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1768/2SC4612 High-Voltage Switching Applications Applicaitons · Color TV sound output, converter, inverter. Features · Adoption of MBIT process. · High breakdown voltage, large current capacity. · Fast switching speed. Package Dimensions unit:mm 2064 [2SA1768/2SC4612] ( ) : 2SA1768 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volta.

  A1767   A1767







2SA1767

Transistors 2SA1767 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A ■ Features • High collector-emitter voltage (Base open) VCEO 0.7±0.1 0.7±0.2 Unit: mm 5.0±0.2 5.1±0.2 4.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C www.DataSheet4U.com Parameter Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −300 −300 −5 −70 −100 750 150 −55 to +150 Unit V V V 2.3±0.2 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature 12.9±0.5 0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 2.5+0.6 –0.2 0.45+0.15 –0.1 mA mA mW °C °C 1: Emitter 2: Collector 3: Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCEO VEBO hFE VCE(sat) fT Cob Conditions IC = −100 µA, IB = 0 IE = −1 µA, IC = 0 VCE = −10 V, IC = −5 mA IC = −10 mA, IB = −1 mA VCB = −10 V, IE = 10 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz 50 7 Min −300 −5 30 150 − 0.6 Typ Max Unit V V  V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE P 30 to 100 Q 60 to 150 Publication da.


2008-07-03 : C4331    276AXXH-12D    2SC4331    2SC4331-Z    2SC4332    HIRK-433    HIRK-315    2SC4332-Z    2SC4336    D63711   


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