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A1860 Datasheet

Part Number A1860
Manufacturers Sanken electric
Logo Sanken electric
Description 2SA1860
Datasheet A1860 DatasheetA1860 Datasheet (PDF)

LAPT 2SA1860 Application : Audio and General Purpose (Ta=25°C) 2SA1860 –100max –100max –150min 50min∗ –2.0max 50typ 400typ V MHz 16.2 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1860 –150 –150 –5 –14 –3 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–.

  A1860   A1860






Part Number A1866
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 2SA1866
Datasheet A1860 DatasheetA1866 Datasheet (PDF)

Ordering number:4721 PNP Epitaxial Planar Silicon Transistor 2SA1866 Muting Circuits, Driver Applications Features · On-chip bias resistors (R1=47k Ω, R2=47kΩ). · Very small-sized package making 2SA1866-applied sets small and slim. · Small ON resistance. · High gain-bandwidth product f T. Package Dimensions unit:mm 2106A [2SA1866] 1 : Base 2 : Emitter 3 : Collector Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV .

  A1860   A1860







2SA1860

LAPT 2SA1860 Application : Audio and General Purpose (Ta=25°C) 2SA1860 –100max –100max –150min 50min∗ –2.0max 50typ 400typ V MHz 16.2 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1860 –150 –150 –5 –14 –3 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–500mA VCE=–12V, IE=2A VCB=–10V, f=1MHz External Dimensions FM100(TO3PF) 0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6 Unit 23.0±0.3 V 9.5±0.2 www.datasheet4u.com µA µA a b pF 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 1.5 4.4 5.45±0.1 1.5 0.65 +0.2 -0.1 3.3 0.8 ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC (V) –60 RL (Ω) 12 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –500 IB2 (mA) 500 ton (µs) 0.25typ tstg (µs) 0.85typ tf (µs) 0.2typ 3.35 B C E Weight : Approx 6.5g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) –14 Collector-Emitter Saturation Voltage V C E (s at) (V ) A m mA mA mA 00 500 400 00 – –3 –6 – V CE ( sat ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –14 (V C E =–4V) 00 mA –7 –200 mA Collector Current I C (A) –1 50 m A –10 –100 mA Collector Current I C (A) –10 –2 p) Tem p) se –5 –50mA C (C ˚C 125 0 0 –1 –2 –3 –4 0 0 –.


2009-05-25 : SJ78xx    A1860    MO1S    C5259    DB1A24BW    DB1A12BW    DB1B05BW    DB1B12BW    DB1B24BW    DB2A05BW   


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