A1909 Datasheet
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-3PML package ·Complement to type 2SC5101
APPLICATIONS ·Audio and general purpose
PINNING PIN 1 2 3
DESCRIPTION Emitter Collector Base
Product Specification
2SA1909
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO VCEO VEBO
IC IB PC Tj Tstg
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
VALUE -140 -140 -6 -10 -4 80 150
-55~150
UNIT V V V A A W
1
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA1909
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-.
Part Number |
A190T |
Manufacturers |
Powerex |
Logo |
|
Description |
High Power Silicon Rectifier |
Datasheet |
A190T Datasheet (PDF) |
.
Part Number |
A190S |
Manufacturers |
Powerex |
Logo |
|
Description |
High Power Silicon Rectifier |
Datasheet |
A190S Datasheet (PDF) |
.
Part Number |
A190PE |
Manufacturers |
Powerex |
Logo |
|
Description |
High Power Silicon Rectifier |
Datasheet |
A190PE Datasheet (PDF) |
.
Part Number |
A190PD |
Manufacturers |
Powerex |
Logo |
|
Description |
High Power Silicon Rectifier |
Datasheet |
A190PD Datasheet (PDF) |
.
Part Number |
A190PC |
Manufacturers |
Powerex |
Logo |
|
Description |
High Power Silicon Rectifier |
Datasheet |
A190PC Datasheet (PDF) |
.
2SA1909
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-3PML package ·Complement to type 2SC5101
APPLICATIONS ·Audio and general purpose
PINNING PIN 1 2 3
DESCRIPTION Emitter Collector Base
Product Specification
2SA1909
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO VCEO VEBO
IC IB PC Tj Tstg
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
VALUE -140 -140 -6 -10 -4 80 150
-55~150
UNIT V V V A A W
1
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA1909
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A
ICBO Collector cut-off current
VCB=-140V; IE=0
IEBO Emitter cut-off current
VEB=-6V; IC=0
hFE DC current gain
IC=-3A ; VCE=-4V
fT Transition frequency
IC=-0.5A ; VCE=-12V
COB Output capacitance
IE=0; VCB=-10V;f=1MHz
Switching times
-140
V
-0.5 V
-10 µA
-10 µA
50 180
20 MHz
400 pF
ton Turn-on time ts Storage time tf Fall time
IC=-5A;RL=12@ IB1=-IB2=-0.5A;VCC=-60V
0.17 µs 1.86 µs 0.27 µs
hFE classifications OP Y
50-100 70-140 90-180
2
SavantIC Semiconductor
S.
2016-06-12 : D1312 TMP11N50G TMPF11N50G TMP11N50 TMPF11N50 TMPF13N50A TMPF13N50G TMP13N50G TMP13N50 TMPF13N50