A1931

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications 2SA1931 Unit: mm Low saturation voltage: VCE (sat) = −0.4 V (max) High-speed switching time: tstg = 1.0 µs (typ.) Complementary to 2SC4881 Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −60 −50 −7 −5 −1 2.0 20 150 −55 to 150 Electrical Characteristics (Tc = 25°C) Unit V V V A A W °C °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Characteristic Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Symbol Test Conditions Min ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob VCB = −50 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −1 V, IC = 1 A VCE = −1 V, IC = −3 A IC = −2 A, IB = −0.2 A IC = −2 A, IB = −0.2 A VCB = −1 V, IC = −1 A VCB = −10 V, IE = 0, f = 1 MHz IB1 10 Ω ton 20 µs Input IB2 Output IB2 IB1 tstg VCC = −30 V ― ― −50 100 60 ― ― ― ― ― ― −IB1 = IB2 = 0.15 A, duty cycle ≤ 1% tf ― Typ. ― ― ― ― ― −0.2 −0.9 60 100 0.1 1.0 0.1 Max −1 −1 ― 300 ― −...