A1933

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1933 2SA1933 High-Current Switching Applications Industrial Applications Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) High-speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC5175 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −60 −50 −7 −5 −1 1.8 150 −55 to 150 V V V A A W °C °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10T1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 1.5 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 Electrical Characteristics (Ta = 25°C) 2SA1933 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emit...