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A1939 Datasheet

Part Number A1939
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SA1939
Datasheet A1939 DatasheetA1939 Datasheet (PDF)

2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm • • Complementary to 2SC5196 Recommend for 40-W high-fidelity audio frequency amplifier output stage. www.DataSheet4U.com Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB .

  A1939   A1939






Part Number A19360
Manufacturers Allegro
Logo Allegro
Description High-Resolution GMR Wheel Speed/Distance Sensor
Datasheet A1939 DatasheetA19360 Datasheet (PDF)

A19360 High-Resolution GMR Wheel Speed and Distance Sensor IC FEATURES AND BENEFITS • High-resolution measurement for enhanced ADAS accuracy, such as for automated parking • GMR technology delivers high magnetic sensitivity for large air gaps and low-jitter switching • SolidSpeed Digital Architecture provides robust, adaptive performance for high output accuracy and full pitch vibration immunity • Integrated solution includes the IC and a protection capacitor in a single overmolded package • IS.

  A1939   A1939







Part Number A1933
Manufacturers Toshiba
Logo Toshiba
Description 2SA1933
Datasheet A1939 DatasheetA1933 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1933 2SA1933 High-Current Switching Applications Industrial Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC5175 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissip.

  A1939   A1939







Part Number A1932
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SA1932
Datasheet A1939 DatasheetA1932 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1932 Unit: mm • High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC5174 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −230 V Collector-emitter voltage VCEO −230 V Emitter-base voltage VEBO −5 V Collector current IC −1 A Base current IB −0.1 A Collector power dissipation Junction tem.

  A1939   A1939







Part Number A1931
Manufacturers Toshiba
Logo Toshiba
Description Silicon PNP Transistor
Datasheet A1939 DatasheetA1931 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications 2SA1931 Unit: mm • Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC4881 Maximum Ratings (Tc = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range.

  A1939   A1939







2SA1939

2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm • • Complementary to 2SC5196 Recommend for 40-W high-fidelity audio frequency amplifier output stage. www.DataSheet4U.com Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −80 −80 −5 −6 −0.6 60 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA ― ― TOSHIBA 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 4.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1939 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage .


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