A1940

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1940 Power Amplifier Applications 2SA1940 Unit: mm Complementary to 2SC5197 Recommended for 55-W high-fidelity audio frequency amplifier output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −120 −120 −5 −8 −0.8 80 150 −55 to 150 Unit V V V A A W °C °C Electrical Characteristics (Tc = 25°C) JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.7 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = −120 V, IE = 0 IEBO VEB = −5 V, IC = 0 V (BR) CEO IC = −50 mA, IB = 0 hFE (1) (Note) VCE = −5 V, IC = −1 A hFE (2) VCE = −5 V, IC = −4 A VCE (sat) VBE fT Cob IC = −6 A, IB = −0.6 A VCE = −5 V, IC = −4 A VCE = −5 V, IC = −1 A VCB = −10 V, IE = 0, f = 1 MHz Note: hFE (1) classification R: 55 to 110, O: 80 to 160 Min ― ― −120 Typ. ― ― ― Max −5.0 −5.0 ― Unit µA µA V 55 ― 160 35 75 ― ― −0.80 −2.0 V ― −0.97 −1.5 V ― 30 ― MHz ― 260 ― pF 1 2004-07-07 Marking TOSHIBA A1940 Characteristics indicator Part No. (or abbreviation code) Lot No. A line indicates ...