DatasheetsPDF.com

A1942 Datasheet

Part Number A1942
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SA1942
Datasheet A1942 DatasheetA1942 Datasheet (PDF)

2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type www.DataSheet4U.com 2SA1942 Power Amplifier Applications • • • High breakdown voltage: VCEO = −160 V (min) Complementary to 2SC5199 Recommended for 80-W high-fidelity audio frequency amplifier output stage Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage.

  A1942   A1942






Part Number A1948
Manufacturers Kexin
Logo Kexin
Description PNP Transistors
Datasheet A1942 DatasheetA1948 Datasheet (PDF)

SMD Type Transistors PNP Transistors 2SA1948 SOT-89 ■ Features ● Collector Current Capability IC=-0.1A ● Collector Emitter Voltage VCEO=-120V ● Complementary to 2SC5213 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -120 -120 -5 -100 500 1.

  A1942   A1942







Part Number A1943
Manufacturers JCST
Logo JCST
Description TO-3P Plastic-Encapsulate Transistors
Datasheet A1942 DatasheetA1943 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SA1943 TRANSISTOR (PNP) FEATURES z High Collector Current Capability z High Power Dissipation z High Frequency z High Voltage z Complement to 2SA5200 TO – 3P 1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS z High-Fidelity Audio Output Amplifier z General Purpose Power Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC PCM RθJA Tj Tstg Parameter Collector-Base Voltage Col.

  A1942   A1942







Part Number A1943
Manufacturers Toshiba
Logo Toshiba
Description 2SA1943
Datasheet A1942 DatasheetA1943 Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications 2SA1943 Unit: mm • High collector voltage: VCEO = −230 V (min) • Complementary to 2SC5200 • Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −230 V Collector-emitter voltage VCEO −230 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1..

  A1942   A1942







Part Number A1941
Manufacturers SavantIC
Logo SavantIC
Description 2SA1941
Datasheet A1942 DatasheetA1941 Datasheet (PDF)

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SA1941 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5198 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC Collector-base voltage Collector-.

  A1942   A1942







2SA1942

2SA1942 TOSHIBA Transistor Silicon PNP Triple Diffused Type www.DataSheet4U.com 2SA1942 Power Amplifier Applications • • • High breakdown voltage: VCEO = −160 V (min) Complementary to 2SC5199 Recommended for 80-W high-fidelity audio frequency amplifier output stage Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −160 −160 −5 −12 −1.2 120 150 −55 to 150 Unit V V V A A W JEDEC °C °C ― ― JEITA TOSHIBA 2-21F1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 9.75 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1942 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain.


2011-02-05 : STBP010    STBP06I    STBP56I    STBP07F    STBP57F    STBP08C    STBP58C    STBP09B    STBP59B    STBP010   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)