TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1943
Power Amplifier Applications
2SA1943
Unit: mm
• High colle...
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1943
Power Amplifier Applications
2SA1943
Unit: mm
High collector
voltage: VCEO = −230 V (min) Complementary to 2SC5200
Recommended for 100-W high-fidelity audio frequency amplifier output stage.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO
−230
V
Collector-emitter
voltage
VCEO
−230
V
Emitter-base
voltage
VEBO −5 V
Collector current
IC −15 A
Base current
IB −1.5 A
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
PC 150 W
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-21F1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 9.75 g (typ.)
temperature/current/
voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Start of commercial production
1994-09
1 2016-01-07
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter b...