A2070

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications DC-DC Converter Applications 2SA2070 Unit: mm High DC current gain: hFE = 200 to 500 (IC = -0.1 A) Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) High-speed switching: tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation DC t = 10 s Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg −50 −50 −7 −1.0 −2.0 −0.1 1.0 2.0 150 −55 to 150 V V V A A W °C °C JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-03-10 Electrical Characteristics (Ta = 25°C)...