DatasheetsPDF.com

A20M18LVFR Datasheet

Part Number A20M18LVFR
Manufacturers Microsemi
Logo Microsemi
Description Power MOSFET
Datasheet A20M18LVFR DatasheetA20M18LVFR Datasheet (PDF)

APT20M18B2VFR A20M18LVFR 200V 100A 0.018Ω POWER MOS V® FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. T-Max® TO-264 LVFR • T-MAX™ or TO-264 Package • Avalanche Energy Rated D • Faster Switching • FAST RECOVERY BODY DIODE • Lower Leakage G MAX.

  A20M18LVFR   A20M18LVFR






Part Number A20M18LVFR
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description Power MOSFET
Datasheet A20M18LVFR DatasheetA20M18LVFR Datasheet (PDF)

APT20M18B2VFR A20M18LVFR 200V 100A 0.018Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. B2VFR T-MAX™ TO-264 LVFR • T-MAX™ or TO-264 Package • Faster Switching • Lower Leakage MAXIMUM RATINGS Symbol VDSS ID IDM www.DataSheet4U.com • Avalanche.

  A20M18LVFR   A20M18LVFR







Power MOSFET

APT20M18B2VFR A20M18LVFR 200V 100A 0.018Ω POWER MOS V® FREDFET B2VFR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. T-Max® TO-264 LVFR • T-MAX™ or TO-264 Package • Avalanche Energy Rated D • Faster Switching • FAST RECOVERY BODY DIODE • Lower Leakage G MAXIMUM RATINGS Symbol Parameter VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current 6 @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 S All Ratings: TC = 25°C unless otherwise specified. APT20M18B2VFR_LVFR UNIT 200 Volts 100 Amps 400 ±30 Volts ±40 625 Watts 5.00 W/°C -55 to 150 300 100 °C Amps 50 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP BVDSS RDS(on) IDSS IGSS VGS(th) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 200 Drain-Source On-State Resistance 2 (VGS = 15V, ID = 50 A) Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Ga.


2021-02-23 : 2N5551BU    APT30M85BVR    APT30N60BC6    APT30N60BC6    2N5551TA    2N2222    APT30N60SC6    APT30M75BLL    APT30M75SFLL    APT30M75BFLL   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)