A2SHB Datasheet PDF

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design for extremely low RDS(ON) 　■Rugged and reliable 　■Lead free product is acquired 　■SOT-23 Package 　■Marking Code: A2SHB 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302ALB（SOT-23） D HNM2302ALB N-Channel MOSFETs HNM2302ALB N-Channel Enhan.

SOT-23 (SOT-23 Field Effect Transistors) GMS2302AL N-Channel Enhancement-Mode MOS FETs N MOS ■MAXIMUM RATINGS Characteristic Symbol Drain-Source Voltage - Gate- Source Voltage - Drain Current (continuous) - Drain Current (pulsed) - Total Device Dissipation TA=25℃ 25℃ Junction BVDSS VGS ID IDM PD TJ Storage Temperature Tstg ■DEVICE MARKING GMS2302AL=A2SHB Max 20 +8 2.6 10 900 150 -55to+150 Unit V V A A mW ℃ ℃ 1 GMS2302AL ■E.

Preliminary Datasheet LPM2302 LPM2302 20V/3.5A N-Channel Enhancement Mode Field Effect Transistor General Description The LPM2302 is N-channel logic enhancement mode power field effect transistor, which are produced by using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for low voltage applications, notebook computer power man.