TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A42 TRANSISTOR (NPN)
TO-92
FEATURES High voltage
1. E...
TIGER ELECTRONIC CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A42 TRANSISTOR (NPN)
TO-92
FEATURES High
voltage
1. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
2. BASE 3. COLLECTOR
VCBO VCEO
Collector-Base
Voltage Collector-Emitter
Voltage
300 V 300 V
VEBO IC PC
Emitter-Base
Voltage Collector Current -Continuous Collector Power Dissipation
5V 500 mA 625 mW
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
RӨJA
Thermal Resistance, junction to Ambient
200 ℃/mW
RӨJC
Thermal Resistance, unction to Case
83.3 ℃/mW
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown
voltage Collector-emitter breakdown
voltage
V(BR)CBO V(BR)CEO
IC=100uA, IE=0 IC=1mA, IB=0
300 300
Emitter-base breakdown
voltage
V(BR)EBO IE=100μA, IC=0
5
Collector cut-off current Emitter cut-off current
ICBO IEBO
VCB=200V, IE=0 VEB=5V, IC=0
DC current gain
hFE(1) hFE(2)
VCE=10V, IC=1mA VCE=10V, IC=10mA
60 80
Collector-emitter saturation
voltage
hFE(3) VCE(sat)
VCE=10V, IC=30mA IC=20mA, IB=2mA
75
Base-emitter saturation
voltage
VBE(sat) IC=20mA, IB=2mA
Transition frequency
fT VCE=20V, IC=10mA,f=30MHZ
50
123
MAX
0.25 0.1 250 0.2 0.9
UNIT V V V μA μA
V V MHz
CLASSIFICATION OF hFE(2)
Rank
A
Range
80-100
B1 100-150
B2 150-200
C 200-250
Typical Characteristics
A42
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