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Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SA562
FEATURE Power dis...
www.DataSheet4U.com
Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SA562
FEATURE Power dissipation PCM : 0.5
TRANSISTOR (PNP)
TO-92
1. EMITTER
W (Tamb=25℃)
2. COLLECTOR
Collector current A ICM : -0.5 Collector-base
voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: TJ : -55℃ to +150℃ 150℃
3. BASE
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation
voltage Base-emitter
voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(on)
unless otherwise specified)
Test conditions MIN -35 -30 -5 -0.1 -0.1 70 240 -0.25 -1 V V TYP MAX UNIT V V V µA µA
Ic= -100µA , IE=0 IC= -1mA , IB=0 IE= -100µA, IC=0 VCB=-35V , IE=0 VEB= -5V , IC=0
VCE=-1 V, IC=-100mA IC= -100mA, IB= -10 mA VCE=- 1V, IC=-100 mA VCE= -6 V, IC= -20mA
Transition frequency
fT
F=30MHz
200
MHz
CLASSIFICATION OF hFE
Rank Range O Y 120-240
hFE(1)
70-140
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