2SA673, 2SA673A
Silicon PNP Epitaxial
Application
• Low frequency amplifier • Complementary pair with 2SC1213 and 2SC12...
2SA673, 2SA673A
Silicon PNP Epitaxial
Application
Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213A
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SA673, 2SA673A
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA673 –35 –35 –4 –500 400 150 –55 to +150 2SA673A –50 –50 –4 –500 400 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
2SA673 Item Collector to base breakdown
voltage Collector to emitter breakdown
voltage Emitter to base breakdown
voltage Collector cutoff current Collector to emitter saturation
voltage DC current trnsfer ratio DC current trnsfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO VCE(sat) hFE*1 hFE Min –35 –35 –4 — — 60 10 — Typ — — — — –0.2 — — Max — — — –0.5 –0.6 320 — 2SA673A Min –50 –50 –4 — — 60 10 — Typ — — — — –0.2 — — Max — — — –0.5 –0.6 320 — V Unit V V V µA V Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 I C = –150 mA, I B = –15 mA*2 VCE = –3 V, I C = –10 mA VCE = –3 V, I C = –500 mA*2 VCE = –3 V, I C =–10 mA
Base to emitter
voltage VBE
–0.64 —
–0.64 —
Notes: 1. The 2SA673 and 2SA673A are grouped by h FE as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320
2
2SA673, 2SA673A
Maximum Collector Dissipation Curve Collector P...