JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
A733LT1
FEATURES Power dissip...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
A733LT1
FEATURES Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector current ICM : -0.15 A Collector-base
voltage V(BR)CBO : -60 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ
Unit : mm
TRANSISTOR£¨PNP £©
SOT¡ª 23
1. BASE 2. EMITTER 3. COLLECTOR
ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown
voltage Collector-emitter breakdown
voltage Emitter-base breakdown
voltage
www.DataSheet4U.com
unless
Test
otherwise
MIN -60 -50 -5
specified£©
TYP MAX UNIT V V V -0.1 -0.1 ¦Ì A ¦Ì A
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE£¨ 1£© VCE(sat)
conditions
Ic= -5 ¦Ì A £¬IE=0 IC= -1 mA , IB=0
IE= -50 ¦Ì A£¬IC=0 VCB= -60 V , IE=0 VEB= -5 V , IC=0
Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation
voltage
VCE= -6 V, IC= -1mA IC= -100mA, IB=- 10m A VCE= -6 V, IC=-10mA
120 -0.18
475 -0.3 V
Transition frequency
f
T
50
MHz
f = 30MHz
CLASSIFICATION OF HFE(1)
Rank Range L 120-200 H 200-475
MARKING
CS
SOT-23 PACKAGE OUTLINE DIMENSIONS
D b
¦È
0.2
E1
E
L1 e e1 C A1 A2 www.DataSheet4U.com Dimensions In Millimeters Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 0.950TPY 1.800 0.550REF 0.300 0° 0.500 8° 0.012 0° 2.000 0.071 0.022REF 0.020 8° Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.037TPY 0.079 Dimensions In Inch...