INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·Large Collector Power Dissipation ·High Collector-...
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION ·Large Collector Power Dissipation ·High Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC1565
APPLICATIONS ·Medium Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-150
V
VCEO
Collector-Emitter
Voltage
VEBO
Emitter-Base
Voltage
IC Collector Current-Continuous
ICP Collector Current-Pulse Collector Power Dissipation
PC @ TC=25℃ TJ Junction Temperature
Tstg Storage Temperature Range
-150 -5 -1 -1.5 10 150
-55~150
V V A A W ℃ ℃
isc Product Specification
2SA795
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA795
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= -0.1A ; IB= 0
V(BR)EBO Emitter-Base Breakdown Vltage
IE= -1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= -300mA; IB= -30mA
VBE(sat) Base-Emitter Saturation
Voltage
IC= -300mA; IB= -30mA
ICBO Collector Cutoff Current
VCB= -100V; IE= 0
IEBO Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -150mA ; VCE= -10V
hFE-2
DC Current Gain
IC=-500mA ; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -50mA ; VCE= -10V
COB Output Capacitance
IE=0 ; VCB= -100V,ftest= 1MHz
hFE-1 Classifications PQR
S
65-110 90-155 130-...