SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-220 package ·Complement t...
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-220 package ·Complement to type 2SC1913/1913A ·Large collector power dissipation ·High VCEO
APPLICATIONS ·Audio frequency high power driver
PINNING PIN 1 2 3
DESCRIPTION
Emitter Collector;connected to mounting base Base
Product Specification
2SA913 2SA913A
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base
voltage
2SA913 2SA913A
Open emitter
VCEO
Collector-emitter
voltage
2SA913 2SA913A
Open base
VEBO IC ICM PC Tj Tstg
Emitter-base
voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature
Open collector TC=25
VALUE -150 -180 -150 -180 -5 -1 -1.5 15 150
-55~150
UNIT V
V
V A A W
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown
voltage
2SA913 2SA913A
IC=-0.1mA ,IB=0
V(BR)EBO Emitter-base breakdown
voltage IE=-10µA ,IC=0
VCEsat
Collector-emitter saturation
voltage
2SA913 IC=-0.5A; IB=-50mA 2SA913A IC=-0.3A; IB=-30mA
VBEsat
Base-emitter saturation
voltage
2SA913 IC=-0.5A; IB=-50mA 2SA913A IC=-0.3A; IB=-30mA
ICBO Collector cut-off current
VCB=-120V; IE=0
IEBO Emitter cut-off current
VEB=-4V; IC=0
hFE-1
DC current gain
IC=-150mA ; VCE=-10V
hFE-2
DC current gain
IC=-500mA ; VC...