AAT7126

30V N-Channel Power MOSFET General Description The AAT7126 30V N-Channel Power MOSFET is a member of AnalogicTech™'s TrenchDMOS™ product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size. AAT7126 Features VDS(MAX) = 30V ID(MAX) 1 = 6.8A @ 25°C Low RDS(ON): 26 mΩ @VGS = 10V 41 mΩ @ VGS = 4.5V Applications Battery-powered portable equipment Laptop computers Desktop computers DC/DC converters Dual SOP-8 Package Preliminary Information Top View D1 8 D1 7 D2 6 D2 5 1 S1 www.DataSheet4U.com 2 G1 3 S2 4 G2 Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25°C unless otherwise noted) Value 30 ±20 ±6.8 ±5.4 ±24 1.7 2.0 1.25 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C 1 Units V TA = 25°C TA = 70°C Pulsed Drain Current Continuous Source Current (Source-Drain Diode) 1 TA = 25°C Maximum Power Dissipation 1 TA = 70°C Operating Junction and Storage Temperature Range A W °C Thermal Characteristics Symbol RθJA RθJA2 RΘJC Description Typical Junction-to-Ambient steady state, one FET on Industry Standard Junction-to-Ambient Figure, t < 10 sec. Typical Junction-to-Case, one FET on Value 100 62.5 35 Units °C/W °C/W °C/W 7126.2002.10.0.9 1 30V N-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25°C unless otherwise noted) Conditions VGS=0V, ID=250µA VGS=10V, ID=6.8A VGS=4.5V, ID=5...