AAT7361

20V P-Channel Power MOSFET General Description The AAT7361 is a low threshold dual P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the footprint of a TSOPJW8 package. AAT7361 Features Drain-Source Voltage (max): -20V Continuous Drain Current1 (max) -3.0A @ 25°C Low On-Resistance: — 100mΩ @ VGS = -4.5V — 175mΩ @ VGS = -2.5V Dual TSOPJW-8 Package Top View D1 8 D1 7 D2 6 D2 5 Applications Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones Absolute Maximum Ratings TA = 25°C, unless otherwise noted. Symbol VDS VGS ID IDM IS TJ TSTG 1 S1 2 G1 3 S2 4 G2 Description Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Value -20 ±12 ±3.0 ±2.4 ±9 -1.0 -55 to 150 -55 to 150 Units V Continuous Drain Current @ TJ = 150°C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Operating Junction Temperature Range Storage Temperature Range TA = 25°C TA = 70°C A °C °C Thermal Characteristics1 Symbol RθJA RθJA2 RθJF PD Description Junction-to-Ambient Steady State, One FET On Junction-to-Ambient t<5 Seconds Junction-to-Foot TA = 25°C Maximum Power Dissipation TA = 70°C Typ 124 74 66 1.4 0.9 Max 155 90 80 Units °C/W °C/W °C/W W 1. Based on thermal dissipation from junction to ambient while mounte...