ACE1512E

ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE1512E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. Features VDS (V)=20V ID=6.5A (VGS=4.5V) RDS(ON)<21mΩ (VGS=4.5V) RDS(ON)<25mΩ (VGS=2.5V) RDS(ON)<33mΩ (VGS=1.8V) ESD Protected : 2000V Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)*AC TA=25℃ TA=70℃ Drain Current (Pulsed)*B Power Dissipation TA=25℃ TA=70℃ Operating temperature / storage temperature Symbol Ratings Unit VDSS 20 V VGSS ±8 V 6.5 ID A 5.2 IDM 24 A 1 PD W 0.64 TJ/TSTG -55~150 ℃ Packaging Type TSOT-23-3 VER 1.1 1 ACE1512E N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Ordering information ACE1512EBMS + H Halogen - free Pb - free BMS : TSOT-23-3 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Gate leakage current Drain-source on-state resistance Forward transconductance Diode forward voltage Maximum body-diode continuous current Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Input capacitance Output capacitance Reverse transfer capacitance Note : Symbol Test Conditions Min Typ Max Unit...