ACE1526B

ACE1526B P-Channel Enhancement Mode Field Effect Transistor Description ACE1526B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features  VDS (V) = -30V  ID = -6A (VGS = -10V) RDS(ON) < 75mΩ (VGS = -10V)  RDS(ON) < 80mΩ (VGS = -4.5V) Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) *AC Drain Current (Pulse) *B TA=25°C TA=70°C Power Dissipation TA=25°C TA=70°C Operating Temperature/ Storage Temperature Symbol VDSS VGSS ID IDM PD TJ//TSTG Max -30 ±20 -6 -4.8 -30 50 25 -55~150 Unit V V A A W ℃ Packaging Type TO-252 Ordering information ACE1526B XX + H Halogen - free Pb - free YM : TO-252 VER 1.1 1 ACE1526B P-Channel Enhancement Mode Field Effect Transistor Electrical CharacteristicsTA=25℃, unless otherwise specified. Parameter Symbol Conditions Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V Gate Threshold Voltage Gate Leakage Current VGS(th) IGSS VGS=VGS, IDS=-250uA VGS=±20V, VDS=0V Drain-Source On-Resistance Forward Transconductance RDS(ON) gFS VGS=-10V, ID=-6A VGS=-4.5V, ID=-3A VDS=-10V,ID=-5.3A Diode Forward Voltage VSD IS=-1.7A, VGS=0V Switching Min. Typ. Max. Unit -30 V -1 uA -1 -1.4 55 68 -6 V 100 nA 75 mΩ 80 10 S -0.82 -1.2 V Tota...