ACE2006M

ACE2006M N-Channel 60-V MOSFET Description ACE2006M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b TC=25°C Continuous Source Current (Diode Conduction) a Power Dissipation TC=25°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 60 ±20 19 75 42 50 -55 to 150 Unit V V A A A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Maximum Junction-to-Case Symbol Maximum Unit RθJA RθJC 40 °C/W 3 Notes a. Surface Mounted on 1” x 1” FR4 Board, drain pad using 2 oz copper, value dependent on PC board thermal characteristics. b. Pulse width limited by maximum junction temperature. VER 1.1 1 Packaging Type TO-252 GDS Ordering information ACE2006M YM + H Halogen - free Pb - free YM : TO-252 ACE2006M N-Channel 60-V MOSFET VER 1.1 2 ACE2006M N-Channel 60-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250...