ACE2308E

ACE2308E N-Channel 30-V MOSFET Features Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a TA=25℃ TA=70℃ Pulse Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating Temperature / Storage Temperature *1 Pw ≦10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.75*0.062 inch glass epoxy board% Symbol Limit VDS 30 VGS ±12 3.5 ID 2.8 IDM 15 IS 1.9 1.3 PD 0.8 TJ/TSTG -55/150 Units V V A A A W OC THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA 100 166 Units OC/W Packaging Type SOT-23-3 D GS VER 1.1 1 ACE2308E N-Channel 30-V MOSFET Ordering information ACE2308EBM + H Halogen - free Pb - free BM : SOT-23-3 Electrical Characteristics (TA=25℃, unless otherwise specified) Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Conditions Static Min. Typ. Max. Unit VGS(th) VDS = VGS, ID = 250 uA 0.4 V V...