ACE2320M
N-Channel 20-V MOSFET
Description ACE2320M uses advanced trench technology to provide excellent RDS(ON). This d...
ACE2320M
N-Channel 20-V
MOSFET
Description ACE2320M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low
voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter.
Features
Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology
Applications
White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
Absolute Maximum Ratings
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current a Pulsed Drain Current b
TA=25℃ TA=70℃
Continuous Source Current (Diode Conduction) a
Power Dissipation a
TA=25℃ TA=70℃
Operating temperature / storage temperature
Symbol Limit Units
VDS 20 V
VGS ±8 V
7.0
ID
A 5.5
IDM 20 A
IS 1.9 A
1.3
PD
W 0.8
TJ/TSTG -55~150 ℃
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient a
t <= 10 sec Steady State
RθJA
Maximum 100 166
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
VER 1.1 1
Packaging Type SOT-23-3
ACE2320M
N-Channel 20-V
MOSFET
Ordering information
ACE2320M BM + H Halogen - free Pb - free BM : SOT-23-3
VER 1.1 2
Electrical Characteristics
TA=25℃, unless otherwise specified.
Parameter
Symbol
Gate-Source Threshold
Voltage Gate-Body Leakage
VGS(t...