JIEJIE MICROELECTRONICS CO. , Ltd
ACJT1 Series 1A TRIACs
Rev.3.0
DESCRIPTION:
ACJT1 series triacs with high ability t...
JIEJIE MICROELECTRONICS CO. , Ltd
ACJT1 Series 1A TRIACs
Rev.3.0
DESCRIPTION:
ACJT1 series triacs with high ability to withstand the shock loading of large current provide high dv/dt rate with strong resistance to electromagnetic interference. They are especially recommended for use on inductive load and serious electromagnetic interference place.
12 3 SOT-89
12 3 SOT-223
MAIN FEATURES
Symbol
Value
Unit
1 32
TO-92
IT(RMS) VDRM /VRRM
1 1000
A
T2(2)
V
IGT ≤5 or ≤10 mA
T1(1) G(3)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Storage junction temperature range
Tstg
Operating junction temperature range Repetitive peak off-state
voltage( Tj=25℃) Repetitive peak reverse
voltage( Tj=25℃)
Tj VDRM VRRM
Non repetitive surge peak Off-state
voltage VDSM
Non repetitive peak reverse
voltage
RMS on-state current
SOT-89/ SOT-223 (TC=70℃)
TO-92 (TC=57℃)
Non repetitive surge peak on-state current ( full cycle, F=50Hz) I2t value for fusing ( tp=10ms)
VRSM IT(RMS)
ITSM I2t
Rate of rise of on-state current (IG=2×IGT) Peak gate current
dIT/dt IGM
Average gate power dissipation
PG(AV)
Value -40-150 -40-125
1000 1000 VDRM +100 VRRM +100
1
10 1.12 50
1 0.2
Unit ℃ ℃ V V V V
A
A A2s A/μs A W
TEL：+86-513-83639777
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http://www.jjwdz.com
ACJT1 Series
Peak gate power
JieJie Microelectronics CO. , Ltd
PGM 1 W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Symbol Test Condition
IGT VD=12V RL=33Ω VGT
VGD
VD=VDRM Tj=125℃ RL=3.3KΩ
IL IG=1.2IGT
Quad...
