ACS10MS

ACS10MS April 1995 Radiation Hardened Triple Three-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 B1 2 A2 3 B2 4 14 VCC 13 C1 12 Y1 11 C3 10 B3 9 A3 8 Y3 Features 1.25 Micron Radiation Hardened SOS CMOS Total Dose 300K RAD (Si) Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ) SEU LET Threshold >80 Dose Rate Upset >1011 MEV-cm2 /mg RAD (Si)/s, 20ns Pulse -55oC +125oC Latch-Up Free Under Any Conditions Military Temperature Range: to C2 5 Y2 6 GND 7 Significant Power Reduction Compared to ALSTTL Logic DC Operating Voltage Range: 4.5V to 5.5V Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min Input Current ≤1µA at VOL, VOH 14 LEAD CERAMIC FLATPACK MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW A1 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC C1 Y1 C3 B3 A3 Y3 Description The Intersil ACS10MS is a radiation hardened triple three-input NAND gate. A high on all inputs forces the output to a low state. The ACS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logic Family. B1 A2 B2 C2 Y2 GND Ordering Information PART NUMBER ACS10DMSR ACS10KMSR ACS10D/Sample ACS10K/Sample ACS10HMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die PACKAGE 14 Lead SBDIP ...