Module. ACT-SF41632 Datasheet

ACT-SF41632 Datasheet PDF


Part ACT-SF41632
Description 128K x 32 SRAM / 512K x 32 Flash Multichip Module
Feature ACT-SF41632 High Speed 128Kx32 SRAM / 512Kx32 Flash Multichip Module CIRCUIT TECHNOLOGY FEATURES .
Manufacture Aeroflex
Datasheet
Download ACT-SF41632 Datasheet


ACT-SF41632 High Speed 128Kx32 SRAM / 512Kx32 Flash Multichi ACT-SF41632 Datasheet




ACT-SF41632
ACT-SF41632 High Speed
128Kx32 SRAM / 512Kx32 Flash
Multichip Module
CIRCUIT TECHNOLOGY
FEATURES
www.aeroflex.com
s 4 – 128K x 8 SRAMs & 4 – 512K x 8 Flash Die in
One MCM
s Access Times of 25ns, 35ns (SRAM) and
60ns, 70ns, 90ns (Flash)
s Organized as 128K x 32 of SRAM and 512K x 32
of Flash Memory with Common Data Bus
FLASH MEMORY FEATURES
s Sector Architecture (Each Die)
q 8 Equal Sectors of 64K bytes each
q Any combination of sectors can be erased with
one command sequence.
s +5V Programing, +5V Supply
s Low Power CMOS
s Embedded Erase and Program Algorithms
s Input and Output TTL Compatible Design
s Hardware and Software Write Protection
s MIL-PRF-38534 Compliant MCMs Available
s Page Program Operation and Internal Program
s Decoupling Capacitors and Multiple Grounds for Control Time.
Low Noise
s 10,000 Erase/Program Cycles
s Commercial, Industrial and Military Temperature
Ranges
s Industry Standard Pinouts
s TTL Compatible Inputs and Outputs
s Packaging – Hermetic Ceramic
q 66–Lead, PGA-Type, 1.385"SQ x 0.245"max,
Aeroflex code# "P1,P5 with/without shoulders)"
q 68–Lead, Dual-Cavity CQFP(F2), 0.88"SQ x
.20"max (.18 max thickness available, contact
factory for details) (Drops into the 68 Lead
JEDEC .99"SQ CQFJ footprint)
FLEX LA
ISO
9001
CE R T I F I E D
Block Diagram – PGA Type Package(P1 & P5) & CQFP(F2)
OE
A0–A18
SCE
FCE
FWE1 SWE1
FWE2 SWE2
FWE3 SWE3
FWE4 SWE4
512K X 8 FLASH
www.DataSheet4U.co12m8K X 8 SRAM
512K X 8 FLASH
128K X 8 SRAM
512K X 8 FLASH
128K X 8 SRAM
512K X 8 FLASH
128K X 8 SRAM
I/O0-7
I/O8-15
I/O16-23
I/O24-31
PIN DESCRIPTION
I/O0-31
Data I/O
A0–18
Address Inputs
FWE1-4 Flash Write Enables
SWE1-4 SRAM Write Enables
FCE Flash Chip Enable
SCE SRAM Chip Enable
OE Output Enable
NC Not Connected
VCC Power Supply
GND
Ground
eroflex Circuit Technology - Advanced Multichip Modules © SCD3851 REV A 5/21/98



ACT-SF41632
Symbol
TC
TSTG
VG
TL
Absolute Maximum Ratings
Rating
Case Operating Temperature
Storage Temperature
Maximum Signal Voltage to Ground
Maximum Lead Temperature (10 seconds)
Range
-55 to +125
-65 to +150
-0.5 to +7
300
Units
°C
°C
V
°C
Parameter
Flash Data Retention
Flash Endurance (Write/Erase Cycles)
10 Years
10,000
Symbol
VCC
VIH
VIL
Normal Operating Conditions
Parameter
Minimum
Maximum
Power Supply Voltage
+4.5 +5.5
Input High Voltage
Input Low Voltage
+2.2
-0.5
VCC + 0.3
+0.8
Units
V
V
V
Capacitance
Symbol Parameter
(VIN = 0V, f = 1MHz, TA = 25°C)
CAD A0 A18 Capacitance
COE OE Capacitance
CWE1-4 F/S Write Enable Capacitance
CCE F/S Chip Enable Capacitance
CI/O I/O0 – I/O31 Capacitance
This parameter is guaranteed by design but not tested
Maximum
80
80
30
50
30
Units
pF
pF
pF
pF
pF
DC Characteristics
(VCC = 5.0V, VSS = 0V, Tc = -55°C to +125°C)
Parameter
Sym
Conditions
Min Max Units
Input Leakage Current
Output Leakage Current
SRAM Operating Supply Current x 32
Mode
Standby Current
SRAM Output Low Voltage
SRAM Output High Voltage
Flash Vcc Active Current for Read (1)
www.FDlaatsahShVeectc4UA.cctoivme Current for Program
or Erase (2)
ILI
ILO
ICCx32
ISB
VOL
VOH
ICC1
ICC2
VCC = Max, VIN = 0 to VCC
FCE = SCE = VIH, OE = VIH,
VOUT = 0 to VCC
SCE = VIL, OE = VIH, f = 5MHz, VCC =
Max, FCE = VIH
FCE = SCE = VIH, OE = VIH, f = 5MHz,
VCC = Max
IOL = 8 mA, VCC = Min, FCE = VIH
IOH = -4.0 mA, , VCC = Min, FCE = VIH
FCE = VIL, OE = VIH, SCE = VIH
FCE = VIL, OE = VIH, SCE = VIH
10 µA
10 µA
500 mA
80 mA
0.4 V
2.4 V
260 mA
300 mA
Flash Output Low Voltage
VOL IOL = 12 mA, VCC = Min, SCE = VIH
0.45 V
Flash Output High Voltage
VOH1 IOH = -2.5 mA, , VCC = Min, SCE = VIH 0.85 x VCC
V
Flash Low Vcc Lock Out Voltage
VLKO
3.2 4.2 V
Notes: 1) The ICC current listed includes both the DC operating current and the frequency dependent component (at 5MHz). The
frequency component typically is less than 2mA/MHz, with OE at VIH 2) ICC active while Embedded Algorithim (program or
erase) is in progress 3) DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
Aeroflex Circuit Technology
2 SCD3851 REV A 5/21/98 Plainview NY (516) 694-6700






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