AD100-8-TO52-S1

Pacific Silicon Sensor Series 8 Data Sheet Part Description AD100-8-TO52-S1 Order # 06-035 OMPLIANT ACTIVE AREA: 0.00785 mm 2 (100 µm DIA) Ø 5.40 Ø 3.00 116° VIEWING Ø 4.70 ANGLE PIN 1 CATHODE Ø0.46 3 PL Ø 2.54 PIN CIRCLE FRONTSIDE VIEW 2.70 3.60 ±1 12.7 3 PL PIN 4 CASE PIN 3 ANODE BACKSIDE VIEW RESPONSIVITY (A/W) RoH FEATURES ∅ 100 µm active area High gain at low bias voltage Fast rise time Low capacitance DESCRIPTION 0.00785 mm2 High Speed, High Gain Avalanche Photodiode with N on P construction. Hermetically packaged in a TO-52-S1 with a clear borosilicate glass window cap. APPLICATIONS High speed optical communications Laser range finder Medical equipment High speed photometry S ABSOLUTE MAXIMUM RATING SYMBOL PARAMETER MIN TSTG TOP TSOLDERING Storage Temp Operating Temp Soldering Temp 10 seconds -55 -40 Electrical Power Dissipation @ 22°C - Optical Peak Value, once for 1 second - IPH (DC) Continuous Optical Operation - IPH (AC) Pulsed Signal Input 50 µs “on” / 1 ms “off” - MAX +125 +100 +260 100 200 250 1 UNITS °C °C °C mW mW µA mA SPECTRAL RESPONSE at M = 100 60 50 40 30 20 10 0 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) C ELECTRO-OPTICAL CHARACTERISTICS @ 22 °C SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS ID Dark Current M = 100* C Capacitance M = 100* VBR Breakdown Voltage ID = 2 µA Temperature Coefficient of VBR Responsivity M = 100; = 0 V; λ = 800 nm --- 50 100 pA --- 0.8 --- pF 1...