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AD10S100

AP Semiconductor

100V 10A Ultra Low VF Single Schottky

AD10S100 100V 10A Ultra Low VF Single Schottky Characteristics Summary Characteristics Values Units IF(AV) 10 A ...


AP Semiconductor

AD10S100

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AD10S100 100V 10A Ultra Low VF Single Schottky Characteristics Summary Characteristics Values Units IF(AV) 10 A VRRM VF @ 5A, TJ = 25℃ TJ, Operating Junction Temperature 100 0.47 -40 to +150 V V, typ. ℃ Features AD10S100F TO-220F PIN3 PIN1 PIN2 Case ◼ Ultra Low Forward Voltage ( VF ) Drop Low Power Losses ◼ Low Leakage Current at high temperature. ◼ Reliable application for various circumstances. ◼ 150℃ Operating Junction Temperature ◼ Lead Free Finish, RoHS Compliant Typical Applications Device optimized for low forward voltage drop to maximize efficiency in Power Supply applications, high frequency converters, freewheeling diodes. www.apsemi.com REV. 01 1 Maximum Ratings Characteristics ( TA = 25℃ unless otherwise specified ) Parameter DC Blocking Voltage Working Peak Reverse Voltage Peak Repetitive Reverse Voltage Average Rectified Forward Current (Rated VR-20Khz Square Wave) – 50% duty cycle Peak Forward Surge Current – 1/2 60hz Peak Repetitive Reverse Surge Current (2uS-1Khz) Typical Thermal Resistance Isolation voltage (TO-220F only) Maximum Rate of Voltage Change ( at Rated VR) Operating Junction Temperature Storage Junction Temperature AD10S100 Symbol VRM VRWM VRRM ID IFSM IRRM RθJC VAC dv/dt TJ TSTG Values 100 Units V V V 10 A 225 1 4 1500 10000 -40 to +150 -40 to +150 A A ℃ /W V V/uS ℃ Electrical Characteristics ( TA = 25℃ unless otherwise specified ) Parameter Test Conditions IF = 3 A Instantaneous Forward Voltage IF = 5 A IF = 10 A...




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