ADG1212-EP

Enhanced Product Low Capacitance, Low Charge Injection, ±15 V/+12 V iCMOS Quad SPST Switches ADG1212-EP FEATURES 1 pF off capacitance 2.6 pF on capacitance <1 pC charge injection 33 V supply range 120 Ω on resistance Fully specified at ±15 V, +12 V No VL supply required 3 V logic-compatible inputs Rail-to-rail operation 16-lead TSSOP Typical power consumption: <0.03 μW ENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard) Military temperature range: −55°C to +125°C Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio signal routing Video signal routing Communication systems GENERAL DESCRIPTION The ADG1212-EP is a monolithic complementary metal-oxide semiconductor (CMOS) device containing four independently selectable switches designed on an iCMOS® (industrial CMOS) process. iCMOS is a modular manufacturing process combining high voltage CMOS and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and redu...