AlGaInP Visible Laser Diode
660nm 50mW 60 oC
Reliable High Power Operation
• Features 1. Highly reliable 2. Higher power...
AlGaInP Visible Laser Diode
660nm 50mW 60 oC
Reliable High Power Operation
Features 1. Highly reliable 2. Higher power 3. High efficiency 4. Low operating current
Applications 1. High power Laser modules 2. Industrial laser markers / measuring instruments 3. Medical application
ADL-66505TL
6-2D-LD66-010_Rev.00
Absolute maximum ratings
Parameter Light output power Reverse
voltage (LD) Reverse
voltage (PD) Forward current (PD) Case temperature Storage temperature
Symbol Condition
PO CW
VRL -
VRD IFD
-
TC -
TS -
Rating 52 2 30 10
-10~+60 -40~+85
Unit mW
V
V
mA oC oC
Electrical and optical characteristics (Tc=25 oC)
Parameter Peak wavelength Threshold current Operating current Operating
voltage Differential efficiency Monitor current* Parallel divergence angle Perpendicular divergence angle Parallel FFP deviation angle Perpendicular FFP deviation angle Emission point accuracy
Symbol Ith Iop Vop Im
xyz
Min. 650
2.0 0.7 0.05 6 13 -3 -3 -80
Typ. 660 45 90 2.5 1.0 0.2
9 17 0 0 0
Max. 670 60 120 3.0 1.4 0.5 13 22
3 3 +80
Unit
Conditions
nm Po=50mW ,CW mA Kink free
mA
V
mW/mA mA deg
Po=45-50mW Po=50mW, VRD=5V
deg
deg Po=50mW
deg
um
z Precautions * Do not operate the device above maximum ratings. Doing so may cause unexpected and permanent damage to the device. * Take precautions to avoid electrostatic discharge and/or momentary power spikes. A change in the characteristics of the laser or premature failure may result. * Proper heat sinking of the d...
