Infrared Laser Diode
808nm 200mW High Power Operation
• Features 1. Low threshold current 2. Low operation current 3. Hi...
Infrared Laser Diode
808nm 200mW High Power Operation
Features 1. Low threshold current 2. Low operation current 3. High pumping efficiency 4. Stable wavelength 5. High reliability
Applications 1. Pumping source for DPSS green laser 2. Medical applications
ADL-80Y04TZ
6-2D-LD80-001_Rev.00
Absolute maximum ratings
Parameter
Symbol Condition
Light output power PO CW
Reverse
voltage (LD) VRL
-
Case temperature
TC
-
Storage temperature
TS
-
Rating 200 2
-10~+50 -40~+85
Unit mW
V oC oC
Electrical and optical characteristics (Tc=25 oC)
Parameter
Symbol Min.
Typ.
Peak wavelength Threshold current Operating current Operating
voltage Differential efficiency Parallel divergence angle Perpendicular divergence angle Parallel FFP deviation angle Perpendicular FFP deviation angle Emission point accuracy
λ
Ith Iop Vop η
θ// θ⊥
Δθ// Δθ⊥ ΔxΔyΔz
805 -
0.8 -3 -5
-80
808 45 225 1.9 1.2 8 39 0 0 0
Max.
811 60 260 2.2 11 48 +3 +5 +80
Unit Conditions (CW)
nm mA mA Po=200mW V mW/mA Po=150-200mW deg deg deg Po=200mW deg um
●Precautions * Do not operate the device above maximum ratings. Doing so may cause unexpected and permanent damage to the device. * Take precautions to avoid electrostatic discharge and/or momentary power spikes. A change in the characteristics of the laser or premature failure may result. * Proper heat sinking of the device assures stability and lifetime. Always ensure that maximum operating temperatures are not exceeded. * Observing visible or in...