ADV
ADM100N10
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS 1...
ADV
ADM100N10
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS 100V
ID 100A
RDS(ON) (mΩ) 13mΩ
TO220C
Features:
● Special process technology for high ESD capability ● High density cell design for ultra low RDS(ON) ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant
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Description:
The ADM100N10 uses advanced trench technology and design to provide excellent charge.lt can be used in a wide variety of applications.
RDS(ON) with low gate
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC =25°C
Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested（2）
ID Continuous Drain Current（1）
PD Maximum Power Dissipation
TC=25°C TC=25...
