ADV
ADM24N10E
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS 1...
ADV
ADM24N10E
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS 100V
ID 24A
RDS(ON) (mΩ) 53mΩ
TO252
2
1 2
3
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source
Voltage
VGSS
Gate-Source
Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current
PD Maximum Power Dissipation 1. Pulse width limited by maximum junction temperature.
TC=25°C TC=25°C TC=70°C TC=25°C TC=70°C
Thermal Characteristics
Symbol
Parameter
RthJC RthJA
Thermal resistance junction-case max Thermal resistance junction-ambient max
Ratings
100 ±20 150 -55 to 150
24
100 24 18 56 35
Ratings 2.5 55
Unit
V °C °C A
A A A W W
Unit °C/W °C/W
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