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ADM2P06W Datasheet

Part Number ADM2P06W
Manufacturers ADV
Logo ADV
Description P-Channel MOSFET
Datasheet ADM2P06W DatasheetADM2P06W Datasheet (PDF)

                        ADV     ADM2P06W  P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -60V ID -2.3A RDS(ON) (mΩ) 180mΩ Features: ● Excellent Cdv/dt effect decline ● Super Low Gate Charge ●100% EAS Guaranteed ● Advanced Trench technology ● Lead-Free,RoHS Compliant SOT223 1  1  2  2  3  3  2 Description: The ADM2P06W is the high cell density trenchedP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching a.

  ADM2P06W   ADM2P06W






P-Channel MOSFET

                        ADV     ADM2P06W  P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -60V ID -2.3A RDS(ON) (mΩ) 180mΩ Features: ● Excellent Cdv/dt effect decline ● Super Low Gate Charge ●100% EAS Guaranteed ● Advanced Trench technology ● Lead-Free,RoHS Compliant SOT223 1  1  2  2  3  3  2 Description: The ADM2P06W is the high cell density trenchedP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.The ADM2P06W meets the RoHS and Green Product requirement with full function reliability approved. Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current(1,4) TC =25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain .


2018-09-11 : ADM3N06B    UF101G    UF100G    ADM200N04    CE6301    CE6275    CE6300    CE6231    CE6212    CE6215   


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